onsemi

NJVMJD42CT4G

Collector-emitter maximum voltage VCEO: 100 V

Collector-base voltage VCBO: 100 V

Emitter-base voltage VEBO: 5 V

Maximum DC collector current: 6 A

Pd-power dissipation: 1750 mW

Gain bandwidth product fT: 3 MHz

Minimum operating temperature:-65 C

Maximum working temperature: + 150 C

DC Collector/Base Gain hfe Min: 30

DC current gain hFE max: 30 at 300 mA, 4 V

Height: 2.38 mm

Length: 6.73 mm

Features

• Lead Formed for Surface Mount Applications in Plastic Sleeves

(No Suffix)

• Straight Lead Version in Plastic Sleeves (“1” Suffix)

• Electrically Similar to Popular TIP41 and TIP42 Series

• Epoxy Meets UL 94 V−0 @ 0.125 in

• NJV Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC−Q101

Qualified and PPAP Capable

• These Devices are Pb−Free and are RoHS Compliant