Vishay

BZD27B5V1P-M3-08 | Vishay

BZD27B5V1P-M3-08

Vishay General Semiconductor-Diodes Division

DIODE ZENER 5.1V 800MW DO219AB

Diode-Zener 5.1 V 800 mW-Surface Mount Type DO-219AB (SMF)

Voltage-Zener (nominal value) (Vz):5.1 V

Power-maximum:800 mW

Impedance (Maximum) (Zzt):6 Ohms

Current at different Vr-reverse leakage:5 µA @ 1 V

Voltage at different If-Forward (Vf):1.2 V @ 200 mA

Operating temperature:-65°C ~ 175°C


Description

FEATURES

• Sillicon planar Zener diodes

• Voltage range includes 43 breakdown

voltages from 3.6 V to 200 V with ± 2 %

for BZD27B-M Series

• Low profile surface-mount package

• Zener and surge current specification

• Low leakage current

• Excellent stability

• Meets MSL level 1, per J-STD-020, LF maximum peak

of 260 °C

• Meets JESD 201 class 2 whisker test

• ESD capability according to AEC-Q101:

human body model: > 8 kV

machine model: > 800 V

• Wave and reflow solderable

• AEC-Q101 qualified available

• Base P/N-M3 - halogen-free, RoHS-compliant, and

commercial grade

• Base P/N-HM3 - halogen-free, RoHS-compliant, and

AEC-Q101 qualified (available on request)

• Compatible to SOD-123W package case outline or

SOD-123F and SOD-123FL

• Material categorization: for definitions of compliance

please see

www.vishay.com/doc?99912


TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

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