STM

STT6N3LLH6

Vds-Drain-source breakdown voltage: 30 V

Id-continuous drain current: 6 A

Rds On-Drain-source on-resistance: 25 mOhms

Vgs-gate-source voltage:-20 V, + 20 V

Vgs th-gate-source threshold voltage: 1 V

Qg-gate charge: 3.6 nC

Minimum operating temperature:-55 C

Maximum working temperature: + 150 C

Pd-power dissipation: 1.6 W

Features

• RDS(on) * Qg industry benchmark

• Extremely low on-resistance RDS(on)

• High avalanche ruggedness

• Low gate drive power losses

Applications

• Switching applications

Description

This device is an N-channel Power MOSFET

developed using the 6th generation of STripFET™

DeepGATE™ technology, with a new gate

structure. The resulting Power MOSFET exhibits

the lowest RDS(on) in all packages.