Configuration: Single

Fall time: 13 ns

Forward transconductance-minimum value: 36 S

Height: 0.9 mm

Length: 2 mm

Product type: MOSFET

Rise time: 15 ns

Series: N-Channel

Installation style: SMD/SMT

Package / Box: PQFN-6

Transistor polarity: N-Channel

Number of channels: 1 Channel

Vds-Drain-source breakdown voltage: 20 V

Id-continuous drain current: 22 A

Rds On-Drain-source on-resistance: 11.7 mOhms

Vgs-gate-source voltage:-12 V, + 12 V

Vgs th- gate-source threshold voltage: 1.1 V

Qg-gate charge: 14 nC

Minimum operating temperature:-55 C

Maximum working temperature: + 150 C

Pd-power dissipation: 9.6 W